aot12n50/aob12n50/aotf12n50 500v, 12a n-channel mosfet general description product summary v ds i d (at v gs =10v) 12a r ds(on) (at v gs =10v) < 0.52 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot12n50l & aotf12n50l & AOB12N50L symbol v ds v gs 600v@150 drain-source voltage 500 the aot12n50 & aob12n50 & aotf12n50 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts ca n be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted aot12n50/aob12n50 aotf12n50 v 30 gate-source voltage g d s to - 263 d 2 pak g d s g d s d s g top view to - 220f to - 220 aotf12n50 aot12n50 aob12n50 v gs i dm i ar e ar e as peak diode recovery dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. dv/dt a w w/ o c c mj c v/ns maximum case-to-sink a maximum junction-to-case mj c/w c/w derate above 25 o c parameter aot12n50/aob12n50 aotf12n50 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds i d 5 50 250 8.4 12* 8.4* t c =25c 12 mosfet dv/dt ruggedness 40 v 30 gate-source voltage t c =100c a 48 pulsed drain current c continuous drain current avalanche current c 454 single plused avalanche energy g 908 5.5 repetitive avalanche energy c junction and storage temperature range maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 2 0.4 0.5 -- units c/w 65 0.5 65 2.5 rev.8.0: april 2014 www.aosmd.com page 1 of 6
aot12n50/aob12n50/aotf12n50 symbol min typ max units 500 600 bv dss /?tj 0.54 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.36 0.52 w g fs 16 s v sd 0.72 1 v i s maximum body-diode continuous current 12 a i sm 48 a c iss 1089 1361 1633 pf c oss 134 167 200 pf c rss 10 12.6 15 pf r g 1.8 3.6 5.4 w q g 30.7 37 nc q gs 7.6 9 nc q gd 13.0 16 nc t d(on) 29 35 ns t r 69 83 ns t d(off) 82 98 ns static drain-source on-resistance v gs =10v, i d =6a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =6a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 m a v ds =400v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =500v, v gs =0v turn-off delaytime v gs =10v, v ds =250v, i d =12a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =12a gate source charge turn-on rise time gate drain charge bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters id=250a, vgs=0v diode forward voltage m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c t d(off) 82 98 ns t f 55.5 67 ns t rr 231 277 ns q rr 2.82 3.4 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =12a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery charge i f =12a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =5.5a, v dd =150v, r g =25 ? , starting t j =25 c rev.8.0: april 2014 www.aosmd.com page 2 of 6
aot12n50/aob12n50/aotf12n50 typical electrical and thermal characteristics 0 4 8 12 16 20 24 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics -55 c v ds =40v 25 c 125 c 0.3 0.4 0.5 0.6 0.7 0.8 0 4 8 12 16 20 24 28 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =6a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5:break down vs. junction temparature rev.8.0: april 2014 www.aosmd.com page 3 of 6
aot12n50/aob12n50/aotf12n50 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 45 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =12a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot12n50/aob12n50 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for aotf12n50 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s area for aot12n50/aob12n50 (note f) operating area for aotf12n50 (note f) 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 11: current de-rating (note b) rev.8.0: april 2014 www.aosmd.com page 4 of 6
aot12n50/aob12n50/aotf12n50 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot12n50/aob12n50 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aotf12n50 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.8.0: april 2014 www.aosmd.com page 5 of 6
aot12n50/aob12n50/aotf12n50 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - vdc id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev.8.0: april 2014 www.aosmd.com page 6 of 6
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